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EMB14P03V Datasheet

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Features and Benefits

6 50 UNIT °C / W p.1 EMB14P03V ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 D.

EMB14P03V EMB14P03V EMB14P03V
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P-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
EMB14P03G
EMB14P03V
EMB1412
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